• 专利附录
  • 专利说明
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    • 专利摘要:
    A sintered product includes a wavelength conversion region (14a) containing a phosphor material that performs primary light wavelength conversion and emits secondary light, and a holding region (14b) intended to be in contact with the wavelength conversion zone (14a). The wavelength conversion zone (14a) and the holding zone (14b) are integrated.
    公开号:FR3053482A1
    申请号:FR1755956
    申请日:2017-06-28
    公开日:2018-01-05
    发明作者:Akihiro Nomura；Hidemichi SONE；Yuzo MAENO；Yukihiro Onoda
    申请人:Koito Manufacturing Co Ltd；
    IPC主号:
    专利说明:

    ® FRENCH REPUBLIC
    NATIONAL INSTITUTE OF INDUSTRIAL PROPERTY © Publication number: 3,053,482 (to be used only for reproduction orders)
    ©) National registration number: 17 55 956
    COURBEVOIE © IntCI 8
    G 02 F1 / 25 (2017.01), F21 S 8/10
    A1 PATENT APPLICATION
    ©) Date of filing: 28.06.17. © Applicant (s): KOITO MANUFACTURING CO., LTD. © Priority: 04.07.16 JP 2016132803. - JP. @ Inventor (s): NOMU RA AKIHI RO, SON E HIDEMICHI, MAENO YUZO and ONODA YUKIHIRO. (43) Date of public availability of the request: 05.01.18 Bulletin 18/01. ©) List of documents cited in the report preliminary research: The latter was not established on the date of publication of the request. (© References to other national documents ® Holder (s): KOITO MANUFACTURING CO., LTD .. related: ©) Extension request (s): © Agent (s): CABINET BEAU DE LOMENIE.
    104) SINTERED PRODUCT AND ELECTROLUMINESCENT DEVICE.
    (5 /) A sintered product comprises a wavelength conversion zone (14a) containing a phosphorus-based material which performs a wavelength conversion of primary light and emits secondary light, and a zone of holding (14b) intended to be in contact with the wavelength conversion zone (14a). The wavelength conversion zone (14a) and the holding zone (14b) are integrated.
    FR 3 053 482 - A1

    i The invention relates to a sintered product and a light emitting device, and more particularly to a sintered product and a light emitting device, which carry out a light wavelength conversion primary from a light source and emit secondary light.
    A light emitting device is used, in which a light emitting diode or a semiconductor laser is used as the light source and a wavelength conversion element containing a phosphorus-based material achieves a wavelength conversion, thereby obtaining white light. In such a light emitting device, primary light such as blue light and ultraviolet light is emitted from the light source and irradiates the wavelength conversion element, and the phosphorus contained in the wavelength conversion element is excited by the primary light and emits secondary light such as yellow light. Then, colors of the primary light and the secondary light are mixed and white light is emitted outside.
    In the publication of Japanese patent application No. 2012-221633 (JP 2012-221633 A) is proposed a vehicle lighting device, in which a semiconductor laser is used as a light source. When a semiconductor laser is used as a light source, it appears as a characteristic that primary light with a large output and a small wavelength is obtained, but a directivity is very strong and the light radiates a small area. Therefore, compared to a case where a light emitting diode is used as the light source, the primary light with a large output irradiates an extremely small area of a wavelength converting element, and white light is emitted. Thus, a light emitting device having a high directivity is obtained.
    Furthermore, in the wavelength conversion element of the light emitting device, heat is generated simultaneously with the wavelength conversion of the primary light. In particular, in the case where a semiconductor laser is used as the light source, the primary light intensively irradiates a small area, a temperature of the wavelength converting element easily increases. Since the phosphorus contained in the wavelength conversion element has a characteristic such that its temperature is associated with a wavelength conversion efficiency, when a temperature change is too great, it is not possible to achieve an appropriate wavelength conversion, thus posing the problem that sufficient white light is not obtained.
    a schematic view
    In the device the semi laser [0005] FIG. 12A is showing an example of a method for fixing a wavelength conversion element in a light emitting device in which a semiconductor laser is used light source.
    emitting light, in which the conductor is used as the light source, a solid wavelength conversion element 2 containing a phosphorus-based material is arranged on a surface of a light extraction part 1 which is made of sapphire or equivalent which transmits primary light, and the wavelength conversion element 2 is fixed on the light extraction part 1 by an adhesive 3. The semiconductor laser serving as a source of light is provided in a position away from the wavelength converting element 2, and is not shown.
    Figure 12B is a schematic view showing another example of a method for fixing a wavelength conversion element in a light emitting device in which a semiconductor laser serves as a light source . In this example, an opening is formed beforehand in a light extraction part 1 of the light emitting device, and a wavelength converting element 2 is inserted in the opening. Adhesive 3 is injected between a side surface of the wavelength conversion element 2 and an interior surface of the opening of the light extraction part 1, and the wavelength conversion element 2 is fixed on the light extraction part 1. In this example, the light extraction part 1 need not be a material which transmits primary light, and a ceramic material or equivalent can be used.
    In the light emitting devices shown in Figure 12A and Figure 12B, since the wavelength conversion element 2 is fixed by the adhesive 3, heat generated in the element wavelength conversion 2 is transferred to the light extraction part 1 via the adhesive 3 and dissipated. In general, the light extraction part 1 is made from sapphire or ceramic, and the adhesive 3 is made from glass, silicone resin or the like, and these materials have relatively low thermal conductivity . Therefore, it is difficult to dissipate favorably from the heat generated in the wavelength converting element 2.
    Therefore, the invention provides a sintered product and a light emitting device which are capable of efficiently dissipating the heat generated with a wavelength conversion.
    A sintered product according to the first aspect of the invention comprises a wavelength conversion zone containing a phosphorus-based material configured to perform a wavelength conversion of primary light and emits secondary light , and a holding zone intended to be in contact with the wavelength conversion zone. The wavelength conversion zone and the holding zone are integrated. The sintered product according to the present description is a product which is commonly designated by the term, in the English language, "compact" and which can also be translated into French by the term "compact". The term “wavelength conversion zone and holding zone are integrated” means that the wavelength conversion zone and the holding zone are in contact with each other and are formed by '' in one piece.
    In the above aspect, since the wavelength conversion zone and the holding zone are integrated, the holding zone is capable of maintaining the wavelength conversion zone without using an adhesive , and heat generated with the wavelength conversion is efficiently dissipated.
    In the previous aspect, the holding zone can have a higher thermal conductivity than that of the wavelength conversion zone.
    In addition, in the previous aspect, the holding zone may have a structure in which a second small ceramic material dispersed inside a first size is ceramic material, and the first ceramic material and the second ceramic material are intertwined in three dimensions.
    Furthermore, in the previous aspect, the first ceramic material may have a higher thermal conductivity than that of the wavelength conversion zone.
    Also still, in the previous aspect, a difference in refractive index between the first ceramic material and the second ceramic material can be 0.2 or more.
    A light emitting device according to the second aspect of the invention comprises the sintered product and a light emitting element configured to emit the primary light.
    According to the invention, it is possible to provide the sintered product and the light emitting device, which are capable of efficiently dissipating the heat generated with a wavelength conversion.
    The characteristics, advantages, and technical and industrial importance of the exemplary embodiments of the invention will be described below with reference to the accompanying drawings, in which identical references denote identical elements, and in which :
    Figure 1 is a schematic sectional view of a light emitting device 10 in one embodiment;
    FIG. 2A is a schematic sectional view of a structure of a wavelength conversion element 14 in the first embodiment, and FIG. 2B is an enlarged schematic sectional view of the structures of a zone of conversion of wavelength 14a and of a holding zone 14b;
    Figure 3A is a process view of a manufacturing method for the wavelength converting element 14, Figure 3B is a process view of the manufacturing method for the wavelength converting element 14, Figure 3C is a process view of the manufacturing process for the wavelength conversion element 14, and Figure 3D is a process view of the manufacturing process for the wavelength conversion element wave 14;
    Figure 4 is a conceptual view of how heat is transferred to the light emitting device 10 in the first embodiment;
    Figure 5A is a schematic sectional view of a structure of a wavelength converting element 14 in a modification of the first embodiment, and Figure 5B is a schematic sectional view of an area of wavelength conversion 14a
    which is enlarged so than of details are represented; Figure 6 is a view in chopped off schematic a light fixture unit 20 in the second
    embodiment;
    Figure 7 is a schematic sectional view of a light emitting device 40 in the third embodiment;
    Figure 8 is a schematic sectional view of a light emitting device 50 in the fourth embodiment;
    Figure 9 is a schematic sectional view of a light emitting device 60 in the fifth embodiment;
    Figure 10A is a schematic sectional view of an exemplary configuration of a wavelength conversion element 14 in the sixth embodiment, and Figure 10B is a schematic sectional view of an exemplary configuration the wavelength converting element 14 in the sixth embodiment;
    Figure 11 is a schematic sectional view of a light emitting device 70 in the seventh embodiment; and
    FIG. 12A is a schematic view of an example of a method for fixing a wavelength conversion element in a light emission device according to the prior art in which a semiconductor laser serves as a source and Figure 12B is a schematic view of an example of a method of attaching a wavelength conversion element in a light emitting device according to the prior art in which a laser is semiconductor serves as a light source.
    The first embodiment of the invention is explained in detail below with reference to the drawings. The same references are used for the same components, elements and treatment or equivalent components, elements, treatment shown in each of the drawings, and a repeated explanation is omitted when appropriate. Figure 1 is a schematic sectional view of a light emitting device 10 in the embodiment.
    The light emitting device 10 is provided with a rod 11, a semiconductor laser 12, a housing part 13, and a wavelength conversion element 14 In the light emitting device 10, the semiconductor laser 12 emits primary light L1 which irradiates the wavelength conversion element 14, and the color of the primary light L1 is mixed with the secondary light obtained from the wavelength conversion performed by the wavelength converting element 14, thereby allowing white light L2 to be emitted outside. FIG. 1 shows the light emitting device 10 of a box of the so-called “CAN” type, but without being limited thereto, and different types of boxes for a semiconductor laser can be used.
    The rod 11 is an element on which the semiconductor laser 12 is mounted and the housing part 13 is fixed, and is provided with a pin, a radiator and so on (not shown) of such that electrical energy is supplied from the outside to the semiconductor laser 12 and heat generated in the semiconductor laser 12 is transferred to the outside. Although a material for the rod 11 is not particularly limited, metal with good heat dissipation, such as copper, is preferred.
    The semiconductor laser 12 is a semiconductor element where electrical energy is delivered and a laser beam is caused to oscillate. Although a material for the semiconductor laser 12 is not particularly limited, a nitride-based semiconductor is used when blue light or ultraviolet light is irradiated as the primary light L1. Device structures of the semiconductor laser 12, such as a resonator structure, an electrode structure, and a current confining structure, are not particularly limited either, and structures which are suitable for obtaining a required light emission intensity and vibration wavelength can be used. In the embodiment, the semiconductor laser 12 is shown as an element which emits primary light L1.
    However, the element is not limited to the semiconductor laser as long as it is a light emitting element which emits the primary light L1 whose wavelength is converted by the conversion element wavelength 14, and can be a light emitting diode, organic light emitting, and so on.
    The housing part 13 is an element arranged so as to cover the semiconductor laser 12 on the top of the rod 11, and is provided with a cylindrical side wall rising from the rod 11, and d 'a top surface. There is an opening in the center of the upper surface of the housing part 13, and the wavelength converting member 14 is fixed on the opening. Although a material for the housing part is not limited, a metallic material with excellent thermal conductivity is preferred in order to favorably transfer to the rod 11 the heat generated in the wavelength converting element 14.
    The wavelength conversion element is a sintered product in which a wavelength conversion zone 14a and a holding zone 14b are in contact with each other and are formed from one piece. The wavelength converting element 14 is fixed on the opening of the housing part 13 and functions as a part which extracts light from the light emitting device 10.
    Figure 2A is a schematic sectional view of a structure of the wavelength conversion element 14 in the first embodiment, and Figure 2B is an enlarged schematic sectional view of structures of the wavelength conversion zone 14a and holding zone 14b. As shown in Figure 2A and Figure 2B, the wavelength conversion element 14 in the embodiment is provided with the wavelength conversion zone 14a and the holding zone 14b .
    The wavelength conversion zone 14a is a part containing a phosphorus-based material, which is excited by the primary light L1 irradiated by the semiconductor laser 12 and emits the secondary light. Then, the colors of the primary light L1 and the secondary light are mixed, thus allowing the white light L2 to be emitted outside. Here, an example is shown in which the colors of primary light L1 and secondary light are mixed so that white light L2 is emitted. However, a plurality of phosphorus-based materials can be provided such that the secondary light in a plurality of colors is emitted, and the white light L2 can be emitted as a result of mixing the colors of the secondary light. An example is shown in which the L2 light to be emitted is white light, but the L2 light may be another monochrome light, or may have a color other than white color, which is obtained by mixing a plurality colours.
    A size of the wavelength conversion zone 14a need only be larger than a zone irradiated with the primary light L1 coming from the semiconductor laser 12, and allow an appropriate conversion of wavelength of the primary light L1 to obtain the secondary light. For example, the wavelength conversion zone 14a has a thickness of about several hundred µm, and a diameter of about 0.1 to several mm. The phosphorus material contained in the wavelength conversion zone 14a is a ceramic phosphor since it is sintered simultaneously with the holding zone 14b as will be described later. As a specific material, ceramic phosphorus obtained by sintering a ceramic body made from a powder of Y3AI5O12, or YAG (aluminum and yttrium garnet) is most preferred. By using a YAG sintered product as a wavelength conversion zone 14a, a wavelength of the primary light L1, which is blue light, is converted, thereby emitting the secondary light, which is yellow light , and the color mixture of the primary light and the secondary light produces white light.
    The holding zone 14b is a part which is formed in one piece and sintered simultaneously with the wavelength conversion zone 14a, and retains the wavelength conversion zone 14a. A material for the holding zone 14b is not particularly limited. However, in order to favorably transfer the heat generated in the wavelength conversion zone 14a, it is preferable that the holding zone 14b has a higher thermal conductivity than the wavelength conversion zone 14a, and the thermal conductivity of the holding zone 14b is 20 W / mK or more.
    Similarly, as shown in Figure 2B, the holding zone 14b has a structure in which a second ceramic material 15b and a third ceramic material 15c are interleaved in three dimensions within a first ceramic material 15a. The thermal conductivity of the holding zone 14b signifies a thermal conductivity of the whole ceramic having the structure in which these materials are intertwined in three dimensions.
    The first ceramic material 15a is a phase which is in contact with the wavelength conversion zone 14a and formed continuously throughout the holding zone 14b, and phases of the second ceramic material 15b and third ceramic material 15c are interleaved three-dimensionally within the first ceramic material 15a. Although a material for the first ceramic material 15a is not particularly limited, it is preferable that the first ceramic material 15a is made from a material having a higher thermal conductivity than that of the second ceramic material 15b and the third ceramic material 15c. By manufacturing the first ceramic material 15a using a material having a higher thermal conductivity than that of the rest of the ceramic materials, heat generated in the phosphorus 14c inside the wavelength conversion zone 14a is easily transferred through the first ceramic material 15a and dissipated outside as shown by black arrows in Figure 2B.
    In addition, it is preferable that a material for the second ceramic material 15b or the third ceramic material 15c has a difference in refractive index of 0.2 or more compared to the first ceramic material 15a . When the plurality of ceramic materials has large differences in refractive index to each other, as shown by the white arrows in Figure 2B, light advancing from the conversion zone of wavelength 14a to the holding zone 14b is reflected by interfaces from the first ceramic material 15a to the third ceramic material 15c which are interleaved in three dimensions. This makes the holding area 14b a whole white area, allowing the holding area 14b to also serve as a light reflecting portion which is capable of preventing light leakage in a lateral direction. Likewise, light is caused to return to the wavelength conversion zone 14a and extracted outside the wavelength conversion zone 14a.
    The holding zone 14b described here is made from three types of material, which are the first ceramic material 15a up to the third ceramic material 15c. However, the number of types of materials is not limited as long as the holding area 14b has a structure in which a plurality of ceramic materials are interleaved in three dimensions.
    When an appropriate combination of materials such as the first ceramic material 15a to the third ceramic material 15c is chosen and a composition rate and a synthesis temperature are appropriately established for sintering, the holding area mentioned above 14b has the structure where each of the materials does not become a compound and each phase is interleaved in three dimensions. Table 1 shows combinations of thermal conductivity and the refractive index of specific ceramic materials, as well as examples of synthesis temperature and composition rate. As shown in Table 1, when AI2O3 is chosen as the first ceramic material 15a, YSZ (ZrO 2 stabilized by Y 2 O 3 ) and TiO 2 (rutile type) can be used as the second ceramic material 15b and third material ceramic 15c. In addition, when MgO is chosen as the first ceramic material 15a, YSZ can be used as the second ceramic material 15b.
    [Table 1]
    n ° First ceramic Second ceramic Differenceof index ofrefractionBetweenfirst andsecondceramic Temperatureof synthesis[° C] Ratecomposition[% by mole] Material Conductivitythermal[W / m-k] Index ofrefraction Material Conductivitythermal[W / m-k] Index ofrefraction 1 AI2O3 About 30 1.76 YSZ ' 1 About 3 2.1 0.34 800 to 1800 AI2O3 is8.5 to 88 2 AI2O3 î î TiO2(Rutile) About 8 2.7 0.96 800 to 1200 AI2O3 is7.5 to 87 3 MgO About 60 1.7 YSZ About 3 2.1 0.4 800 to 2100 MgO is22.4 to 94.6
    * 1: ZrO 2 stabilized by Y2O3 A manufacturing process for the wavelength conversion element 14 is then explained using FIGS. 3A to 3D. first, as shown in Figure 3A, a raw sheet 14a ', in which raw materials for the wavelength conversion zone 14a are mixed, and a raw sheet 14b', in which materials raw materials for the holding zone 14b are mixed, are prepared. Next, a laminated raw sheet is made, in which the raw sheet 14a 'is enclosed by the raw sheets 14b'. For example, the raw sheet 14a 'containing YAG phosphorus is used, and a composite material containing the plurality of ceramic materials shown in Table 1 is used as the raw sheet 14b'.
    Then, as shown in Figure 3B, the laminated raw sheets obtained are pressed using a hot isostatic pressure device (WIP), and the raw sheet 14a 'and the raw sheets 14b' are caused to adhere to each other.
    Then, as shown in FIG. 3C, the adhered laminated raw sheets are sintered simultaneously, and a sintered product is obtained, which has a layer structure where the wavelength conversion zone 14a is enclosed by the holding zones 14b. When YAG is used as the phosphorus-based material contained in the wavelength conversion zone 14a, the combination No. 1 or No. 3 in Table 1 is chosen as materials for the holding zone 14b, and the temperature sintering temperature is set at 1500 to 1600 ° C.
    Finally, the sintered product having the layer structure obtained is divided by cutting, etc., thereby obtaining the wavelength conversion element 14 which is a sintered product in which the holding zones 14b are in contact with both sides of the wavelength conversion zone 14a and sintered in one piece.
    Figure 4 is a conceptual view of how heat is transferred to the light emitting device 10 of the embodiment. The wavelength conversion element 14 of the light emitting device 10 is irradiated by the primary light L1 emitted by the semiconductor laser
    12. A black arrow in Figure 4 schematically shows a passage of heat from the wavelength conversion zone 14a. As discussed above, since the holding area 14b has a higher thermal conductivity than that of the wavelength conversion area 14a, heat is favorably transferred to the housing portion 13 through the areas of holding 14b which are in contact with the side surfaces of the wavelength conversion zone 14a, respectively, and sintered simultaneously, and heat is then dissipated. In addition, as described above, since a plurality of ceramic materials having differences in refractive index of 0.2 or more from each other are interleaved three-dimensionally in the holding area 14b, light advancing from the wavelength conversion area 14a to the holding area 14b is reflected without being transmitted through the holding area 14b, and out of the length conversion area wave 14a as shown by the arrows L2 in the drawing.
    As mentioned above, in this embodiment, the wavelength conversion element 14 has the wavelength conversion zone 14a, which contains the phosphorus-based material which performs a wavelength conversion of the primary light and emits the secondary light, and the holding zone 14b, which is intended to be in contact with the wavelength conversion zone 14a. Likewise,
    The element conversion length wave 14 is the product sintered in which the zoned conversion of length wave 14a and the zoned of holding 14b are sintered simultaneously and one holding. So, the
    Sintered product in this embodiment is capable of efficiently dissipating heat generated with the wavelength conversion.
    A modification of the first embodiment is then explained with reference to Figure 5A and Figure 5B. Figure 5A is a schematic sectional view of a structure of a wavelength converting element 14 in the modification of the first embodiment, and Figure 5B is a schematic sectional view of an area of wavelength conversion 14a which is enlarged so that details are shown. In this modification, the wavelength conversion area 14a of the wavelength converting element 14 has a layer structure having wavelength conversion layers 14d and heat transport layers 14e .
    The wavelength conversion layer 14d is a layer containing a phosphorus-based material which is excited by primary light L1 emitted by a semiconductor laser 12, and emits secondary light. Specific materials for the wavelength conversion layer 14d are similar to those set forth in the first previous embodiment.
    The heat transport layer 14e is a layer made from a transparent material which transmits the primary light L1 and the secondary light. The transparent heat transport layer 14e means that the heat transport layer 14e has a high total light transmitting capacity. Linear transmission capacity may be low, and it is preferable that the total light transmission capacity is 80% or more, for example. It is also preferable that a material used for the heat transport layer 14e has a higher thermal conductivity than that of the wavelength conversion layer 14d.
    As shown in Figure 5A and Figure 5B, the wavelength conversion area 14a has a structure in which the wavelength conversion layer 14d and the heat transport layer 14e are laminated alternately. For this reason, heat generated in the wavelength conversion layers 14d is favorably transferred to the holding region 14b through the heat transport layers 14e, and heat generated with a wavelength conversion wave is effectively dissipated. In addition, since the heat transport layer 14e has a high total light transmission capacity and is transparent, the heat transport layer 14e does not block the primary light L1 from the semiconductor laser 12 and the secondary light. obtained after wavelength conversion in the wavelength conversion layer 14d, thereby obtaining both an emission of the primary light L1 and an extraction of the secondary light and a heat dissipation.
    In the figure 5A and FIG. 5B, a example is shown in which three layers of wavelength conversion 14d and three layers of
    14th heat transport are laminated alternately. However, the number of layers is not limited, and the number can be greater or one of each. Thicknesses of the wavelength conversion layer 14d and the heat transport layer 14e can be similar or different, and a thickness ratio can be established as appropriate depending on a balance between a wavelength conversion in the wavelength conversion layer 14d and a heat transport in the heat transport layer 14e.
    The wavelength conversion layer 14d and the heat transport layer 14e can be laminated alternately using an adhesive such as silicone resin, or raw sheets can be glued together and sintered d '' in one piece. Using the hot isostatic pressure and the sintering technology described in the first embodiment, the holding region 14b, the wavelength conversion layer 14d, and the heat transport layer 14e are sintered simultaneously. Then, a reflection at an interface between the layers is reduced, and an extraction efficiency of the primary light L1 and the secondary light is improved. Thus, it is preferable that full sintering is used to form the wavelength conversion element 14. As examples of specific materials for the wavelength conversion layer 14d and the heat transport layer 14e , which are sintered in one piece, when YAG is used for the wavelength conversion layer 14d, alumina can be combined as the heat transport layer 14e.
    In the modification of the embodiment, the wavelength conversion zone 14a has the layered structure of the wavelength conversion layers 14d and the heat transport layers 14e, and the transport layers heat cells 14e are capable of favorably transporting heat generated in the wavelength conversion layers 14d due to wavelength conversion in the holding region 14b. As a result, heat dissipation is improved, which makes it possible to prevent deterioration of the wavelength conversion efficiency caused by an excessive increase in temperature in the wavelength conversion pose 14d.
    The second form of the invention is explained next with reference to Figure 6. An explanation of the first embodiment parts is omitted a schematic sectional view of lighting 20 in the second embodiment. This embodiment is a lighting fixture unit
    production of ; referring at the identical at the The figure 6 East
    an apparatus unit for a vehicle, which is configured using the light emitting device 10 described in the first embodiment as a light source.
    The lighting unit 20 shown in Figure 6 is configured to form a light distribution configuration for high beam. The lighting unit 20 is provided with the light emitting device 10, a cover 21, a light body 22, a projection lens 23, a reflector 24 having a elliptical reflecting surface which reflects light emitted to the projection lens 23 from a heat dissipating fin 25 which dissipates heat generated in the light emitting device 10 outward through a base portion 26 , the base part 26 on which the light-emitting device 10 is mounted, a pivoting actuating device 27, a screw 29, a leveling actuating device 30, and a screw 31.
    The base part 26 is supported by the pivoting actuating device 27 so as to be able to pivot in a horizontal direction. An upper part of the base part 26 is connected to the light body 22 by means of the screw 31 and so on. The pivoting actuator 27 is connected to the leveling actuator 30. The leveling actuator 30 moves a connecting member 28 by rotating the screw 29, and is capable of changing the inclination of the base part 26 in a top-bottom direction. Thus, the leveling actuator 30 is used to change an optical axis of the lighting fixture unit 20 and a light distribution configuration formed by the lighting fixture unit 20 in up-down direction.
    As shown in FIG. 1, the wavelength of the primary light L1 emitted by the semiconductor laser 12 is converted by the wavelength converting element 14 into secondary light, and the white light L2 composed by mixing the color of the primary light L1 and the secondary light is emitted by the light emitting device 10. As shown in FIG. 6, the white light emitted upwards by the device Light emission 10 is reflected forward by the reflector 24, transmitted through the projection lens 23 and the hood 21, and projected to the front of the vehicle.
    In the lighting fixture unit 20 in this embodiment, as shown in Figure 4 and Figure 6, heat generated in the wavelength conversion zone 14a goes to through the housing part 13 and the rod 11 through the holding zone 14b, is transferred to the heat dissipation fin 25 from the base part 26, and then dissipated. Therefore, in the lighting unit 20 in the embodiment, it is also possible to achieve stable white light irradiation while favorably dissipating heat generated in the length conversion area d wave 14a.
    The third embodiment of the invention is then explained with reference to FIG. 7. An explanation of the parts identical to the first embodiment is omitted. Figure 7 is a schematic sectional view of a light emitting device 40 in the third embodiment. The light emitting device 40 is provided with a rod 41, a semiconductor laser 42, and a wavelength converting element 44. In the light emitting device 40, primary light L1 is emitted by the semiconductor laser 42 and irradiates the wavelength conversion element 44. Next, a color of the primary light L1 is mixed with that of a secondary light, which is obtained after wavelength conversion in the wavelength converting element 44. The light emitting device 40 thus emits white light outside.
    In this embodiment, the wavelength conversion element 44 is a sintered product in which a wavelength conversion zone 44a and a holding zone 44b are in contact with one another. 'other and are formed in one piece. In the wavelength converting element 44 in this embodiment, the holding area 44b is in contact with side surfaces and a bottom surface of the wavelength converting area 44a, forming a shape in which the wavelength conversion zone 44a is embedded in the holding zone 44b. In addition, the holding area 44b has a structure in which a plurality of ceramic materials are interleaved in three dimensions. By bringing the difference in refractive index between the ceramic materials to 0.2 or more, the holding area 14b becomes a white area as a whole, and also functions as a light reflecting portion.
    The semiconductor laser 42 is provided on an exposed surface side of the wavelength conversion area 44a, and emits primary light L1 to the wavelength conversion area 44a. The primary light L1 incident on the wavelength conversion zone 44a is extracted outside the exposed surface once the wavelength is converted by a phosphorus-based material. As shown by a white arrow in Figure 7, light advancing from the wavelength conversion area 44a to the holding area 44b is reflected by the holding area 44b which serves as the reflecting part of the light, brought back to the wavelength conversion zone 44a, and extracted outside.
    As shown by a black arrow in Figure 7, since the holding zone 44b has a higher thermal conductivity than that of the wavelength conversion zone 44a, heat is favorably transferred and dissipated through the holding zone 44b and the rod 41. The holding zone 44b is obtained by being in contact with the lateral surfaces and the lower surface of the wavelength conversion zone 44a and simultaneously sintered.
    The fourth embodiment of the invention is then explained with reference to FIG. 8. An explanation of the parts identical to the first embodiment is omitted. Figure 8 is a schematic sectional view of a light emitting device 50 in the fourth embodiment. The light emitting device 50 is provided with a rod 51, semiconductor lasers 52, and a wavelength converting element 54. In the light emitting device 50, the primary light L1 from semiconductor lasers 52 irradiates the wavelength conversion element 54, and the color of the primary light L1 is mixed with that of secondary light, which is obtained after conversion of length d wave at the wavelength converting element 54. The light emitting device 50 thus emits white light L2 outside.
    In this embodiment, the wavelength conversion element 54 is also a sintered product in which a wavelength conversion zone 54a and a holding zone 54b are in contact with each other. the other and are formed in one piece. In the wavelength conversion element 54 in this embodiment, the holding region 54b is in contact with side surfaces of the wavelength conversion region 54a. In addition, the holding area 54b has a structure in which a plurality of ceramic materials are interleaved in three dimensions. By bringing the difference in refractive index among ceramic materials to 0.2 or more, the holding area 54b becomes a white area as a whole, and also functions as a light reflecting portion.
    In this embodiment, the semiconductor lasers 52 are mounted on the rod 51, the wavelength conversion element 54 is disposed on top of the semiconductor lasers 52, and the area wavelength converter 54a covers light emission positions of semiconductor lasers 52. A wavelength of the primary light L1 incident on the wavelength conversion area 54a is converted by the phosphorus-based material, and light is extracted outside of an exposed surface. As shown by a white arrow in Fig. 8, light which is directed from the wavelength conversion area 54a to the holding area 54b is reflected by the holding area 54b which serves as the reflecting part of the image. light, brought back to the wavelength conversion zone
    Outside.
    54a, and extracted [0059] As represented by the black arrows in FIG. 8, since the holding zone 54b has a higher thermal conductivity than that of the zone
    of conversion length wave 54a, from the heat East favorably transferred to through The area of maintenance 54b and dissipated. The holding area 54b is in contact with
    emission conversion the side surfaces of the wavelength conversion zone 54a and sintered in one piece.
    The fifth embodiment of the invention is then explained with reference to Figure 9. An explanation of the parts identical to the first embodiment is omitted. Figure 9 is a schematic sectional view of a light emitting device 60 in the fifth embodiment. The light emitting device 60 is provided with a rod 61, a semiconductor laser 62, and a wavelength element 64. In the light device 60, primary light L1 from the semiconductor laser 62 irradiates the wavelength converting element 64, and the color of the primary light L1 is mixed with that of a secondary light emitted after wavelength conversion at the wavelength converting element 64. The light emitting device 60 thus emits white light L2 outside.
    In this embodiment, the wavelength conversion element 64 is also a sintered product in which a wavelength conversion zone 64a and a holding zone 64b are in contact with each other. the other and are formed in one piece. In the wavelength converting element 64 in this embodiment, the holding area 64b is in contact with a lower surface of the wavelength converting area 64a, and the length converting area d wave 64a is mounted on an upper surface of the holding area 64b. In addition, the holding area 64b has a structure in which a plurality of ceramic materials are intertwined in three dimensions. By bringing the difference in refractive index among ceramic materials to 0.2 or more, the holding area 64b becomes a white area as a whole, and also serves as the light reflecting portion.
    The semiconductor laser 62 is disposed on an exposed surface side of the wavelength conversion area 64a, and emits primary light L1 to the wavelength conversion area 64a. The primary light L1 incident on the wavelength conversion zone 64a is extracted outside the exposed surface after having gone through a wavelength conversion carried out by a phosphorus-based material. As shown by a white arrow in Figure 9, light directed from the wavelength conversion area 64a to the holding area 64b is reflected by the holding area 64b which serves as the light reflecting portion, brought back to the wavelength conversion zone 64a, and extracted outside.
    As shown by the black arrows in Figure 9, since the holding area 64b has a higher thermal conductivity than that of the wavelength conversion area 64a, heat is favorably transferred and dissipated through the holding area 64b and the rod 61. The holding area 64b is in contact with the lower surface of the wavelength conversion area 64a and sintered simultaneously.
    The sixth embodiment of the invention is explained next with reference to Figure 10A and Figure 10B. An explanation of the parts identical to the first embodiment is omitted. Figure 10A and Figure 10B are schematic sectional views of exemplary configuration of a wavelength converting element in the sixth embodiment. The wavelength conversion element, which is a sintered product according to the invention, must only have a wavelength conversion zone 14a and a holding zone 14b which are in contact with each other. other and sintered in one piece. The shapes of the wavelength conversion zone 14a and of the holding zone 14b are not limited to those described in the first to fifth embodiments.
    For example, as shown in FIG. 10A, the wavelength conversion zone 14a having a generally cylindrical shape can be provided near the center of the flat plate-shaped holding zone 14b and, as this is shown in FIG. 10B, a wavelength conversion zone in the form of a truncated cone 14a can be provided.
    In this embodiment, the wavelength conversion element 14 has the wavelength conversion zone 14a, which contains a phosphorus-based material which performs a wavelength conversion from primary light and emits secondary light, and the holding zone 14b which is intended to be in contact with the wavelength conversion zone 14a, and the wavelength conversion element 14 is also a product sintered in which the wavelength conversion zone 14a and the holding zone 14b are sintered simultaneously and in one piece, and is capable of efficiently dissipating heat generated with the wavelength conversion.
    The seventh embodiment of the invention is then explained with reference to Figure 11. An explanation of the parts identical to the first embodiment is omitted. Figure 11 is a schematic sectional view of a light emitting device 70 in the seventh embodiment.
    The light emitting device 70 is provided with a semiconductor laser 72, a wavelength conversion element 74, and a support element 76. In the device emitting light 70, primary light L1 from semiconductor laser 72 irradiates the wavelength conversion element 74, and the color of primary light L1 is mixed with that of secondary light emitted after wavelength conversion at the wavelength converting element 74. Thus, the light emitting device 70 emits white light L2 outside.
    As shown in Figure 11, the wavelength conversion element 74 in this embodiment is a sintered product in which a wavelength conversion zone 74a has a cone shape overall truncated, and a lateral surface of the wavelength conversion zone 74a is in contact with a holding zone 74b and formed in one piece. In addition, a lower surface of the wavelength conversion area 74a, which has the larger diameter, is an incident surface for the primary light L1, and the wavelength conversion area 74a is maintained to be tapered along a direction of advance of the primary light L1. Since the side of the wavelength conversion area 74a with the smaller diameter serves as the light-emitting surface, it is possible to reduce a white light-emitting area. In the form shown here, the diameter of the wavelength conversion area 74a is gradually reduced. The diameter can however change in stages.
    The support member 76 is a plate-like member in which an opening is formed, and provided on the side of the incident light surface of the wavelength converting member 74 so that the wavelength conversion area 74a is exposed over the aperture. The opening of the support member 76 is formed such that its radius is smaller than that of the incident light surface of the wavelength conversion area 74a of At, and is arranged to become concentric with the wavelength conversion area 74a. A material for the support member 76 is not limited as long as the support member 76 has rigidity to be able to retain the wavelength converting member 74. However, the use of a ceramic material and a metal having a high thermal conductivity is preferred in order to improve heat dissipation.
    Desired optical characteristics can be added to the opening of the support element 76 by forming an optical film (not shown). For example, when a reflection film which lets the primary light through and reflects the secondary light is formed, it is possible to prevent the secondary light from being extracted by the incident surface side of the length conversion area. wave 74a. Thus, it becomes possible to efficiently extract white light from the emitting surface side and limit a decrease in light flux and brightness.
    In this embodiment, a concentration of a phosphorus-based material contained in the wavelength conversion zone 74a is low, and the thickness of the wavelength conversion zone 74a is increased compared to that in the prior art. For example, in the prior art, a phosphorus concentration is in the range of 0.05 to 0.5% atmospheric and the thickness is about 0.1 to 0.3mm. However, in this embodiment, the phosphorus concentration is in a range of 0.0005 to 0.05% atmospheric and the thickness is about 1 to 5 mm.
    Since the concentration of phosphorus contained in the wavelength conversion zone 74a is low, positions where heat is generated due to a wavelength conversion of primary light into secondary light are scattered. Since the thickness of the wavelength conversion area 74a is large, an area in contact with the holding area 74b becomes large. Due to the dispersion of the heat generation positions and an increase in the contact area, the heat dissipation efficiency of the wavelength conversion area 74a is improved. In addition, by increasing the diameter of the incident light surface side of the wavelength conversion area 74a, it is possible to simultaneously improve wavelength conversion and heat dissipation on the surface side. incident where a light intensity of the primary light is strong. In this case, the primary light advances into the wavelength conversion area 74a and a wavelength conversion of the primary light is performed in the phosphor. Therefore, even if the diameter on the emitting surface side is reduced, a wavelength conversion of the primary light is effectively carried out. Likewise, by reducing the diameter of the emitting surface, the brightness is improved.
    In this embodiment, the side of the wavelength conversion zone 74a with the larger diameter serves as the incident surface, but the side with the smaller diameter may be the incident surface. In this case, the diameter increases along a direction of advance of the primary light, and, on the lateral surface of the wavelength conversion area 74a in contact with the holding area 74b, of the light is reflected back to the emitting surface having the larger diameter, and white light is efficiently extracted.
    In this embodiment, the wavelength conversion element 74 also has the wavelength conversion zone 74a, which contains the phosphorus-based material which performs the wavelength conversion primary light and emits secondary light, and the holding area 74b, which is intended to be in contact with the wavelength conversion area 74a, and is a sintered product in which the length conversion area d wave 74a and the holding zone 74b are sintered simultaneously and in one piece. Thus, the wavelength conversion element 74 is capable of efficiently dissipating heat generated with the wavelength conversion.
    A modification of the seventh embodiment is then explained. As a wavelength conversion element 74, instead of a sintered product in which a wavelength conversion zone 74a and a holding zone 74b are in contact with each other and are formed of in one piece, a structure can be used in which the wavelength conversion zone 74a and the holding zone 74b are sintered separately and then combined with each other, and the support element 76 prevents the wavelength conversion area 74a to fall.
    In the modification of the embodiment, since the wavelength conversion zone 74a and the holding zone 74b are formed as separate bodies and combined together, freedom in the forms of the conversion zone of wavelength 74a and the holding region 74b is improved. Since a support member 76, which has an opening smaller than the wavelength conversion area 74a, is provided on the side of the wavelength conversion area 74a with the larger diameter, it is possible to prevent the wavelength conversion area 74a from falling out of the holding area 74b.
    The invention is not limited to the preceding embodiments, and various modifications can be made. The technical scope of the invention also includes embodiments which are obtained by appropriately combining technical means set out in the respective embodiments.
    权利要求:
    Claims (5)
    [1]
    1. Sintered product characterized in that it comprises:
    a wavelength conversion zone (14a,
    44a, 54a, 64a, 74a) containing a phosphorus-based material configured to achieve wavelength conversion of primary light and emits secondary light; and a holding zone (14b, 44b, 54b, 64b, 74b) intended to be in contact with the wavelength conversion zone (14a, 44a, 54a, 64a, 74a), in which
    the conversion area of wave length (14a, 44a, 54a, 64a, 74a) and the holding zone (14b, 44b , 54b, 64b, 74b) are integrated. 2. Sintered product according to claim 1, in which the holding zone (14b, 44b, 54b, 64b, 74b) a
    higher thermal conductivity than that of the wavelength conversion zone (14a, 44a, 54a, 64a, 74a).
    [2]
    3. Sintered product according to claim 1 or 2, in which the holding zone (14b, 44b, 54b, 64b, 74b) has a structure in which a second small ceramic material (15b) is dispersed inside. of a first ceramic material (15a) and the first ceramic material (15a) and the second ceramic material (15b) are interleaved in a three-dimensional manner.
    [3]
    4. Sintered product according to claim 3, in which the first ceramic material (15a) has a higher thermal conductivity than that of the zone of
    [4]
    5 wavelength conversion (14a, 44a, 54a, 64a, 74a).
    5. A sintered product according to claim 3 or 4, wherein a difference in refractive index between the first ceramic material (15a) and the second ceramic material (15b) is 0.2 or more.
    [5]
    6. Light emission device characterized in that it comprises:
    15 the sintered product according to any one of claims 1 to 5; and a light emitting element configured to emit the primary light.
    1/11
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    同族专利:
    公开号 | 公开日
    DE102017211169A1|2018-01-04|
    CN107579144B|2021-03-19|
    US10541339B2|2020-01-21|
    JP2018002912A|2018-01-11|
    JP6862110B2|2021-04-21|
    US20190341507A1|2019-11-07|
    US20180006167A1|2018-01-04|
    CN107579144A|2018-01-12|
    FR3053482B1|2021-05-21|
    US10403771B2|2019-09-03|
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    法律状态:
    2018-05-11| PLFP| Fee payment|Year of fee payment: 2 |
    2020-05-12| PLFP| Fee payment|Year of fee payment: 4 |
    2020-09-25| PLSC| Search report ready|Effective date: 20200925 |
    优先权:
    申请号 | 申请日 | 专利标题
    JP2016132803|2016-07-04|
    JP2016132803A|JP6862110B2|2016-07-04|2016-07-04|Sintered body and light emitting device|
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